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NP180N04TUG
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
10.0 ± 0.2
8.4 TYP.
4.45 ± 0.2
1.3 ± 0.2
8
0.025 to 0.25
0.6 ± 0.15
1 2 3 4 5 6 7
10.0 ± 0.2
1.27 TYP.
0.5 ± 0 .2
0 to 8 °
0.25
1. Gata
2, 3, 5, 6, 7. Source
4, 8. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18896EJ1V0DS
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相关代理商/技术参数
NP180N04TUG-E2-AY 制造商:Renesas Electronics Corporation 功能描述:
NP180N04TUJ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP180N04TUJ-E1-AY 功能描述:MOSFET N-CH 40V 180A TO-263-7 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP180N04TUJ-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP180N04TUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP180N04TUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263-7P - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 180A TO-263
NP180N04TUK-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP180N055TUJ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR